| PART |
Description |
Maker |
| VNC2-32L1B-REEL VNC2-48L1B VNC2-64Q1B VNC2-32Q1B |
Future Technology Devices International Ltd
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
|
| DC3217IYE |
The Shape that Fits the Future
|
Intel Corporation
|
| 2FB-XX-F-ST-5 |
FUTURE BUS SIGNAL
|
Adam Technologies, Inc.
|
| 2FB-XX-M-ST-XXXX |
FUTURE BUS SIGNAL
|
Adam Technologies, Inc.
|
| 2FB-XX-F-V |
FUTURE BUS SIGNAL
|
Adam Technologies, Inc.
|
| EP1AGX35CF1152I6N EP1AGX35DF1152C6N |
The ArriaTM GX family of devices combines 3.125 gigabits per second (Gbps) serial transceivers with reliable packaging technology
FPGA, 33520 CLBS, PBGA1152 35 X 35 MM, 1 MM PITCH, BGA-1152
|
Altera Corporation
Altera, Corp.
|
| EP82562GTSL7RL |
Intel in Embedded. Roadmap to your Future.
|
Intel Corporation
|
| AN209 |
Using Terminator Technology in Stratix & Stratix GX Devices
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
Altera Corporation
|
| LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005 |
PolySwitch Resettable Devices Line-Voltage-Rated Devices
|
Tyco Electronics
http://
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| LR4-380XF LR4-600XF VTP210SL19.2_5.8 MINISMDE190F- |
PolySwitch Resettable Devices Strap Battery Devices
|
Tyco Electronics
|
|
